A highly integrated nonvolatile bidirectional RFET with low leakage current

A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFE...

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Detalles Bibliográficos
Autores principales: Liu, Xi, Li, Mengmeng, Zhang, Shouqiang, Jin, Xiaoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558334/
https://www.ncbi.nlm.nih.gov/pubmed/37809891
http://dx.doi.org/10.1016/j.heliyon.2023.e19298

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558334/
https://www.ncbi.nlm.nih.gov/pubmed/37809891
http://dx.doi.org/10.1016/j.heliyon.2023.e19298

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