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A highly integrated nonvolatile bidirectional RFET with low leakage current
A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFE...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558334/ https://www.ncbi.nlm.nih.gov/pubmed/37809891 http://dx.doi.org/10.1016/j.heliyon.2023.e19298 |
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author | Liu, Xi Li, Mengmeng Zhang, Shouqiang Jin, Xiaoshi |
author_facet | Liu, Xi Li, Mengmeng Zhang, Shouqiang Jin, Xiaoshi |
author_sort | Liu, Xi |
collection | PubMed |
description | A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail. |
format | Online Article Text |
id | pubmed-10558334 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Elsevier |
record_format | MEDLINE/PubMed |
spelling | pubmed-105583342023-10-08 A highly integrated nonvolatile bidirectional RFET with low leakage current Liu, Xi Li, Mengmeng Zhang, Shouqiang Jin, Xiaoshi Heliyon Research Article A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail. Elsevier 2023-08-28 /pmc/articles/PMC10558334/ /pubmed/37809891 http://dx.doi.org/10.1016/j.heliyon.2023.e19298 Text en © 2023 The Authors https://creativecommons.org/licenses/by/4.0/This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Research Article Liu, Xi Li, Mengmeng Zhang, Shouqiang Jin, Xiaoshi A highly integrated nonvolatile bidirectional RFET with low leakage current |
title | A highly integrated nonvolatile bidirectional RFET with low leakage current |
title_full | A highly integrated nonvolatile bidirectional RFET with low leakage current |
title_fullStr | A highly integrated nonvolatile bidirectional RFET with low leakage current |
title_full_unstemmed | A highly integrated nonvolatile bidirectional RFET with low leakage current |
title_short | A highly integrated nonvolatile bidirectional RFET with low leakage current |
title_sort | highly integrated nonvolatile bidirectional rfet with low leakage current |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558334/ https://www.ncbi.nlm.nih.gov/pubmed/37809891 http://dx.doi.org/10.1016/j.heliyon.2023.e19298 |
work_keys_str_mv | AT liuxi ahighlyintegratednonvolatilebidirectionalrfetwithlowleakagecurrent AT limengmeng ahighlyintegratednonvolatilebidirectionalrfetwithlowleakagecurrent AT zhangshouqiang ahighlyintegratednonvolatilebidirectionalrfetwithlowleakagecurrent AT jinxiaoshi ahighlyintegratednonvolatilebidirectionalrfetwithlowleakagecurrent AT liuxi highlyintegratednonvolatilebidirectionalrfetwithlowleakagecurrent AT limengmeng highlyintegratednonvolatilebidirectionalrfetwithlowleakagecurrent AT zhangshouqiang highlyintegratednonvolatilebidirectionalrfetwithlowleakagecurrent AT jinxiaoshi highlyintegratednonvolatilebidirectionalrfetwithlowleakagecurrent |