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A highly integrated nonvolatile bidirectional RFET with low leakage current

A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFE...

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Detalles Bibliográficos
Autores principales: Liu, Xi, Li, Mengmeng, Zhang, Shouqiang, Jin, Xiaoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558334/
https://www.ncbi.nlm.nih.gov/pubmed/37809891
http://dx.doi.org/10.1016/j.heliyon.2023.e19298
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author Liu, Xi
Li, Mengmeng
Zhang, Shouqiang
Jin, Xiaoshi
author_facet Liu, Xi
Li, Mengmeng
Zhang, Shouqiang
Jin, Xiaoshi
author_sort Liu, Xi
collection PubMed
description A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail.
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spelling pubmed-105583342023-10-08 A highly integrated nonvolatile bidirectional RFET with low leakage current Liu, Xi Li, Mengmeng Zhang, Shouqiang Jin, Xiaoshi Heliyon Research Article A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides. Thereafter, the interconnection can be simplified. The conduction type of the SGCN-BRFET is reconfigured by programming the FPG with different type of charges into the FPG. By optimizing the quantities of the stored charges, the FPG effective voltage can be changed to achieve higher forward current and lower leakage current. The physical mechanism of the proposed SGCN-RFET has been systematically analyzed. The device performance has been compared with BRFET. The influence of the amount of charge to the device performance has also been discussed in detail. Elsevier 2023-08-28 /pmc/articles/PMC10558334/ /pubmed/37809891 http://dx.doi.org/10.1016/j.heliyon.2023.e19298 Text en © 2023 The Authors https://creativecommons.org/licenses/by/4.0/This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Research Article
Liu, Xi
Li, Mengmeng
Zhang, Shouqiang
Jin, Xiaoshi
A highly integrated nonvolatile bidirectional RFET with low leakage current
title A highly integrated nonvolatile bidirectional RFET with low leakage current
title_full A highly integrated nonvolatile bidirectional RFET with low leakage current
title_fullStr A highly integrated nonvolatile bidirectional RFET with low leakage current
title_full_unstemmed A highly integrated nonvolatile bidirectional RFET with low leakage current
title_short A highly integrated nonvolatile bidirectional RFET with low leakage current
title_sort highly integrated nonvolatile bidirectional rfet with low leakage current
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558334/
https://www.ncbi.nlm.nih.gov/pubmed/37809891
http://dx.doi.org/10.1016/j.heliyon.2023.e19298
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