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A highly integrated nonvolatile bidirectional RFET with low leakage current
A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFE...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Elsevier
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558334/ https://www.ncbi.nlm.nih.gov/pubmed/37809891 http://dx.doi.org/10.1016/j.heliyon.2023.e19298 |