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In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements

Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th...

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Detalles Bibliográficos
Autores principales: Li, Jinshi, Shen, Pingchuan, Zhuang, Zeyan, Wu, Junqi, Tang, Ben Zhong, Zhao, Zujin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558558/
https://www.ncbi.nlm.nih.gov/pubmed/37802995
http://dx.doi.org/10.1038/s41467-023-42028-5