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In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558558/ https://www.ncbi.nlm.nih.gov/pubmed/37802995 http://dx.doi.org/10.1038/s41467-023-42028-5 |
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author | Li, Jinshi Shen, Pingchuan Zhuang, Zeyan Wu, Junqi Tang, Ben Zhong Zhao, Zujin |
author_facet | Li, Jinshi Shen, Pingchuan Zhuang, Zeyan Wu, Junqi Tang, Ben Zhong Zhao, Zujin |
author_sort | Li, Jinshi |
collection | PubMed |
description | Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f-Fu exhibits volatile turn-on feature while f-Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f-Fu possesses higher switching probability and faster responsive time, while f-Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f-Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator. |
format | Online Article Text |
id | pubmed-10558558 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-105585582023-10-08 In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements Li, Jinshi Shen, Pingchuan Zhuang, Zeyan Wu, Junqi Tang, Ben Zhong Zhao, Zujin Nat Commun Article Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f-Fu exhibits volatile turn-on feature while f-Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f-Fu possesses higher switching probability and faster responsive time, while f-Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f-Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator. Nature Publishing Group UK 2023-10-06 /pmc/articles/PMC10558558/ /pubmed/37802995 http://dx.doi.org/10.1038/s41467-023-42028-5 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Li, Jinshi Shen, Pingchuan Zhuang, Zeyan Wu, Junqi Tang, Ben Zhong Zhao, Zujin In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
title | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
title_full | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
title_fullStr | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
title_full_unstemmed | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
title_short | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
title_sort | in-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558558/ https://www.ncbi.nlm.nih.gov/pubmed/37802995 http://dx.doi.org/10.1038/s41467-023-42028-5 |
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