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In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements

Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th...

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Autores principales: Li, Jinshi, Shen, Pingchuan, Zhuang, Zeyan, Wu, Junqi, Tang, Ben Zhong, Zhao, Zujin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558558/
https://www.ncbi.nlm.nih.gov/pubmed/37802995
http://dx.doi.org/10.1038/s41467-023-42028-5
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author Li, Jinshi
Shen, Pingchuan
Zhuang, Zeyan
Wu, Junqi
Tang, Ben Zhong
Zhao, Zujin
author_facet Li, Jinshi
Shen, Pingchuan
Zhuang, Zeyan
Wu, Junqi
Tang, Ben Zhong
Zhao, Zujin
author_sort Li, Jinshi
collection PubMed
description Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f-Fu exhibits volatile turn-on feature while f-Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f-Fu possesses higher switching probability and faster responsive time, while f-Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f-Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator.
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spelling pubmed-105585582023-10-08 In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements Li, Jinshi Shen, Pingchuan Zhuang, Zeyan Wu, Junqi Tang, Ben Zhong Zhao, Zujin Nat Commun Article Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f-Fu exhibits volatile turn-on feature while f-Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f-Fu possesses higher switching probability and faster responsive time, while f-Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f-Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator. Nature Publishing Group UK 2023-10-06 /pmc/articles/PMC10558558/ /pubmed/37802995 http://dx.doi.org/10.1038/s41467-023-42028-5 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Li, Jinshi
Shen, Pingchuan
Zhuang, Zeyan
Wu, Junqi
Tang, Ben Zhong
Zhao, Zujin
In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
title In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
title_full In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
title_fullStr In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
title_full_unstemmed In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
title_short In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
title_sort in-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10558558/
https://www.ncbi.nlm.nih.gov/pubmed/37802995
http://dx.doi.org/10.1038/s41467-023-42028-5
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