Interfacial Properties of the SnO/κ-Ga(2)O(3) p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga(2)O(3)

[Image: see text] The interfacial properties of a planar SnO/κ-Ga(2)O(3) p–n heterojunction have been investigated by capacitance–voltage (C–V) measurements following a methodological approach that allows consideration of significant combined series resistance and parallel leakage effects. Single-fr...

Descripción completa

Detalles Bibliográficos
Autores principales: Rajabi Kalvani, Payam, Parisini, Antonella, Sozzi, Giovanna, Borelli, Carmine, Mazzolini, Piero, Bierwagen, Oliver, Vantaggio, Salvatore, Egbo, Kingsley, Bosi, Matteo, Seravalli, Luca, Fornari, Roberto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10561148/
https://www.ncbi.nlm.nih.gov/pubmed/37733937
http://dx.doi.org/10.1021/acsami.3c08841

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10561148/
https://www.ncbi.nlm.nih.gov/pubmed/37733937
http://dx.doi.org/10.1021/acsami.3c08841

Ejemplares similares