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Interfacial Properties of the SnO/κ-Ga(2)O(3) p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga(2)O(3)

[Image: see text] The interfacial properties of a planar SnO/κ-Ga(2)O(3) p–n heterojunction have been investigated by capacitance–voltage (C–V) measurements following a methodological approach that allows consideration of significant combined series resistance and parallel leakage effects. Single-fr...

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Detalles Bibliográficos
Autores principales:	Rajabi Kalvani, Payam, Parisini, Antonella, Sozzi, Giovanna, Borelli, Carmine, Mazzolini, Piero, Bierwagen, Oliver, Vantaggio, Salvatore, Egbo, Kingsley, Bosi, Matteo, Seravalli, Luca, Fornari, Roberto
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2023
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10561148/ https://www.ncbi.nlm.nih.gov/pubmed/37733937 http://dx.doi.org/10.1021/acsami.3c08841

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