Effect of electrode materials on resistive switching behaviour of NbO(x)-based memristive devices

Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between involved materials, interfaces, and device functionalities...

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Detalles Bibliográficos
Autores principales: Leonetti, Giuseppe, Fretto, Matteo, Pirri, Fabrizio Candido, De Leo, Natascia, Valov, Ilia, Milano, Gianluca
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10562416/
https://www.ncbi.nlm.nih.gov/pubmed/37813937
http://dx.doi.org/10.1038/s41598-023-44110-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10562416/
https://www.ncbi.nlm.nih.gov/pubmed/37813937
http://dx.doi.org/10.1038/s41598-023-44110-w

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