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Effect of electrode materials on resistive switching behaviour of NbO(x)-based memristive devices
Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between involved materials, interfaces, and device functionalities...
Autores principales: | Leonetti, Giuseppe, Fretto, Matteo, Pirri, Fabrizio Candido, De Leo, Natascia, Valov, Ilia, Milano, Gianluca |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10562416/ https://www.ncbi.nlm.nih.gov/pubmed/37813937 http://dx.doi.org/10.1038/s41598-023-44110-w |
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