Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial...

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Detalles Bibliográficos
Autores principales: Yang, Zhi, Zhang, Shuai, Ma, Shufang, Shi, Yu, Liu, Qingming, Hao, Xiaodong, Shang, Lin, Han, Bin, Qiu, Bocang, Xu, Bingshe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10563067/
https://www.ncbi.nlm.nih.gov/pubmed/37687761
http://dx.doi.org/10.3390/ma16176068

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10563067/
https://www.ncbi.nlm.nih.gov/pubmed/37687761
http://dx.doi.org/10.3390/ma16176068

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