Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot

Indium arsenide (InAs) quantum dots (QDs) grown by molecular beam epitaxy (EBM) on gallium arsenide (GaAs) substrates have exhibited quantized charge-trapping characteristics. An electric charge can be injected in a single QD by a gold-coated AFM nano-probe placed directly on it using a conductive-m...

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Detalles Bibliográficos
Autores principales: Rezeq, Moh'd, Abbas, Yawar, Wen, Boyu, Wasilewski, Zbig, Ban, Dayan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10563844/
https://www.ncbi.nlm.nih.gov/pubmed/37822897
http://dx.doi.org/10.1039/d3na00638g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10563844/
https://www.ncbi.nlm.nih.gov/pubmed/37822897
http://dx.doi.org/10.1039/d3na00638g

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