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Effects of Post-Annealing on the Properties of ZnO:Ga Films with High Transparency (94%) and Low Sheet Resistance (29 Ω/square)
This study presents gallium-doped zinc oxide (ZnO:Ga, GZO) thin films. GZO thin films with both high transparency and low sheet resistance were prepared by RF sputtering and then post-annealed under nitrogen and hydrogen forming gas. With post-annealing at 450 °C, the proposed films with a film thic...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10573347/ https://www.ncbi.nlm.nih.gov/pubmed/37834601 http://dx.doi.org/10.3390/ma16196463 |