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Ultraviolet Photodetector Based on a Beta-Gallium Oxide/Nickel Oxide/Beta-Gallium Oxide Heterojunction Structure
In this paper, an n–p–n structure based on a β-Ga(2)O(3)/NiO/β-Ga(2)O(3) junction was fabricated. The device based on the β-Ga(2)O(3)/NiO/β-Ga(2)O(3) structure, as an ultraviolet (UV) photodetector, was compared with a p–n diode based on a NiO/β-Ga(2)O(3) structure, where it showed rectification and...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10575374/ https://www.ncbi.nlm.nih.gov/pubmed/37837164 http://dx.doi.org/10.3390/s23198332 |