High‐Density Vertical Transistors with Pitch Size Down to 20 nm

Vertical field effect transistors (VFETs) have attracted considerable interest for developing ultra‐scaled devices. In particular, individual VFET can be stacked on top of another and does not consume additional chip footprint beyond what is needed for a single device at the bottom, representing ano...

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Detalles Bibliográficos
Autores principales: Xiao, Zhaojing, Liu, Liting, Chen, Yang, Lu, Zheyi, Yang, Xiaokun, Gong, Zhenqi, Li, Wanying, Kong, Lingan, Ding, Shuimei, Li, Zhiwei, Lu, Donglin, Ma, Likuan, Liu, Songlong, Liu, Xiao, Liu, Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582445/
https://www.ncbi.nlm.nih.gov/pubmed/37552811
http://dx.doi.org/10.1002/advs.202302760

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582445/
https://www.ncbi.nlm.nih.gov/pubmed/37552811
http://dx.doi.org/10.1002/advs.202302760

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