The effects of helium, strontium, and silver triple ions implanted into SiC

The effects of helium (He), silver (Ag) and strontium (Sr) ions triple implanted into polycrystalline silicon carbide (SiC) were investigated. Ag ions of 360 keV were first implanted into polycrystalline SiC to a fluence of 2 × 10(16) cm(−2) at 600 °C, followed by implantation of Sr ions of 280 keV...

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Detalles Bibliográficos
Autores principales: Ntshobeni, G., Abdalla, Z.A.Y., Mokgadi, T.F., Mlambo, M., Njoroge, E.G., Msimanga, M., Sohatsky, A., Skuratov, V.A., Hlatshwayo, T.T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10585298/
https://www.ncbi.nlm.nih.gov/pubmed/37867893
http://dx.doi.org/10.1016/j.heliyon.2023.e20877

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10585298/
https://www.ncbi.nlm.nih.gov/pubmed/37867893
http://dx.doi.org/10.1016/j.heliyon.2023.e20877

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