Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of...

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Detalles Bibliográficos
Autores principales: Pyo, Juyeong, Jang, Junwon, Ju, Dongyeol, Lee, Subaek, Shim, Wonbo, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608025/
https://www.ncbi.nlm.nih.gov/pubmed/37895680
http://dx.doi.org/10.3390/ma16206698

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608025/
https://www.ncbi.nlm.nih.gov/pubmed/37895680
http://dx.doi.org/10.3390/ma16206698

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