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Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing
The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608025/ https://www.ncbi.nlm.nih.gov/pubmed/37895680 http://dx.doi.org/10.3390/ma16206698 |
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author | Pyo, Juyeong Jang, Junwon Ju, Dongyeol Lee, Subaek Shim, Wonbo Kim, Sungjun |
author_facet | Pyo, Juyeong Jang, Junwon Ju, Dongyeol Lee, Subaek Shim, Wonbo Kim, Sungjun |
author_sort | Pyo, Juyeong |
collection | PubMed |
description | The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of amorphous BN have been insufficiently explored for memory applications. Herein, we fabricated a Pt/BN/TiN device utilizing the resistive switching mechanism to achieve synaptic characteristics in a neuromorphic system. The switching mechanism is investigated based on the I–V curves. Utilizing these characteristics, we optimize the potentiation and depression to mimic the biological synapse. In artificial neural networks, high-recognition rates are achieved using linear conductance updates in a memristor device. The short-term memory characteristics are investigated in depression by controlling the conductance level and time interval. |
format | Online Article Text |
id | pubmed-10608025 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-106080252023-10-28 Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing Pyo, Juyeong Jang, Junwon Ju, Dongyeol Lee, Subaek Shim, Wonbo Kim, Sungjun Materials (Basel) Article The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of amorphous BN have been insufficiently explored for memory applications. Herein, we fabricated a Pt/BN/TiN device utilizing the resistive switching mechanism to achieve synaptic characteristics in a neuromorphic system. The switching mechanism is investigated based on the I–V curves. Utilizing these characteristics, we optimize the potentiation and depression to mimic the biological synapse. In artificial neural networks, high-recognition rates are achieved using linear conductance updates in a memristor device. The short-term memory characteristics are investigated in depression by controlling the conductance level and time interval. MDPI 2023-10-15 /pmc/articles/PMC10608025/ /pubmed/37895680 http://dx.doi.org/10.3390/ma16206698 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Pyo, Juyeong Jang, Junwon Ju, Dongyeol Lee, Subaek Shim, Wonbo Kim, Sungjun Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing |
title | Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing |
title_full | Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing |
title_fullStr | Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing |
title_full_unstemmed | Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing |
title_short | Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing |
title_sort | amorphous bn-based synaptic device with high performance in neuromorphic computing |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608025/ https://www.ncbi.nlm.nih.gov/pubmed/37895680 http://dx.doi.org/10.3390/ma16206698 |
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