Composition Engineering of Indium Zinc Oxide Semiconductors for Damage-Free Back-Channel Wet Etching Metallization of Oxide Thin-Film Transistors

In contrast to lift-off and shadow mask processes, the back-channel wet etching (BCWE) process is suitable for industrial-scale metallization processes for the large-area and mass production of oxide thin-film transistors (TFTs). However, chemical attacks caused by the corrosive metal etchants used...

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Detalles Bibliográficos
Autores principales: Zhang, Xuan, Cho, Sung Woon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608869/
https://www.ncbi.nlm.nih.gov/pubmed/37893276
http://dx.doi.org/10.3390/mi14101839

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608869/
https://www.ncbi.nlm.nih.gov/pubmed/37893276
http://dx.doi.org/10.3390/mi14101839

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