Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two distinct electric field stress conditions. The channel temperature (T(ch)) of the devices exhibits variability contingent upon the stress voltage and power dissipation, thereby influencing the long-term reliability of t...

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Detalles Bibliográficos
Autores principales: Chakraborty, Surajit, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608931/
https://www.ncbi.nlm.nih.gov/pubmed/37893270
http://dx.doi.org/10.3390/mi14101833

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608931/
https://www.ncbi.nlm.nih.gov/pubmed/37893270
http://dx.doi.org/10.3390/mi14101833

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