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Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure
We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two distinct electric field stress conditions. The channel temperature (T(ch)) of the devices exhibits variability contingent upon the stress voltage and power dissipation, thereby influencing the long-term reliability of t...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608931/ https://www.ncbi.nlm.nih.gov/pubmed/37893270 http://dx.doi.org/10.3390/mi14101833 |