A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness

A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performance and a longer short-circuit withstand time (t(sc...

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Detalles Bibliográficos
Autores principales: Yin, Sujie, Cao, Wei, Hu, Xiarong, Ge, Xinglai, Liu, Dong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609025/
https://www.ncbi.nlm.nih.gov/pubmed/37893399
http://dx.doi.org/10.3390/mi14101962

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609025/
https://www.ncbi.nlm.nih.gov/pubmed/37893399
http://dx.doi.org/10.3390/mi14101962

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