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A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness
A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performance and a longer short-circuit withstand time (t(sc...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609025/ https://www.ncbi.nlm.nih.gov/pubmed/37893399 http://dx.doi.org/10.3390/mi14101962 |