Vertical GaN MOSFET Power Devices

Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the...

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Detalles Bibliográficos
Autores principales: Langpoklakpam, Catherine, Liu, An-Chen, Hsiao, Yi-Kai, Lin, Chun-Hsiung, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609112/
https://www.ncbi.nlm.nih.gov/pubmed/37893374
http://dx.doi.org/10.3390/mi14101937

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609112/
https://www.ncbi.nlm.nih.gov/pubmed/37893374
http://dx.doi.org/10.3390/mi14101937

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