Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS

SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper. Based on existing research, breakdown point transfer technology (BPT) was used to optimize SiC/Si VDMOS. Simulation results showed t...

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Detalles Bibliográficos
Autores principales: Yang, Xin, Duan, Baoxing, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609155/
https://www.ncbi.nlm.nih.gov/pubmed/37893327
http://dx.doi.org/10.3390/mi14101890

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609155/
https://www.ncbi.nlm.nih.gov/pubmed/37893327
http://dx.doi.org/10.3390/mi14101890

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