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Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS
SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper. Based on existing research, breakdown point transfer technology (BPT) was used to optimize SiC/Si VDMOS. Simulation results showed t...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609155/ https://www.ncbi.nlm.nih.gov/pubmed/37893327 http://dx.doi.org/10.3390/mi14101890 |