A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications

This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same...

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Detalles Bibliográficos
Autores principales: Hu, Lian, Yang, Ziqiang, Fang, Yuan, Li, Qingfeng, Miao, Yixuan, Lu, Xiaofeng, Sun, Xuechun, Zhang, Yaxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609183/
https://www.ncbi.nlm.nih.gov/pubmed/37893358
http://dx.doi.org/10.3390/mi14101921

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609183/
https://www.ncbi.nlm.nih.gov/pubmed/37893358
http://dx.doi.org/10.3390/mi14101921

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