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A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications
This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609183/ https://www.ncbi.nlm.nih.gov/pubmed/37893358 http://dx.doi.org/10.3390/mi14101921 |