Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits

Hafnium-based ferroelectric memories are a promising approach to enhancing integrated circuit performance, offering advantages such as miniaturization, compatibility with CMOS technology, fast read and write speeds, non-volatility, and low power consumption. However, FeRAM (Ferroelectric Random Acce...

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Detalles Bibliográficos
Autores principales: Zhang, Donglin, Yang, Honghu, Cao, Yue, Han, Zhongze, Liu, Yixuan, Wu, Qiqiao, Han, Yongkang, Jiang, Haijun, Yang, Jianguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609286/
https://www.ncbi.nlm.nih.gov/pubmed/37893287
http://dx.doi.org/10.3390/mi14101851

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609286/
https://www.ncbi.nlm.nih.gov/pubmed/37893287
http://dx.doi.org/10.3390/mi14101851

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