Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths

A set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and spectral and spatial characteristics) are measured,...

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Detalles Bibliográficos
Autores principales: Kirichenko (Bobretsova), Yulia, Veselov, Dmitriy, Klimov, Alexander, Slipchenko, Sergey, Shuvalova, Natalia, Lyutetsky, Andrey, Pikhtin, Nikita, Marmalyuk, Alexander, Svetogorov, Vladimir, Ryaboshtan, Yuriy, Ladugin, Maksim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609327/
https://www.ncbi.nlm.nih.gov/pubmed/37887897
http://dx.doi.org/10.3390/nano13202746

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609327/
https://www.ncbi.nlm.nih.gov/pubmed/37887897
http://dx.doi.org/10.3390/nano13202746

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