Positive and Negative Photoconductivity in Ir Nanofilm-Coated MoO(3) Bias-Switching Photodetector

In this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO(3) wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 × 10(19) cm(−3) with 0.19 nm roughness....

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Detalles Bibliográficos
Autores principales: Basyooni-M. Kabatas, Mohamed A., En-nadir, Redouane, Rahmani, Khalid, Eker, Yasin Ramazan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609430/
https://www.ncbi.nlm.nih.gov/pubmed/37893298
http://dx.doi.org/10.3390/mi14101860

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609430/
https://www.ncbi.nlm.nih.gov/pubmed/37893298
http://dx.doi.org/10.3390/mi14101860

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