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Positive and Negative Photoconductivity in Ir Nanofilm-Coated MoO(3) Bias-Switching Photodetector
In this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO(3) wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 × 10(19) cm(−3) with 0.19 nm roughness....
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609430/ https://www.ncbi.nlm.nih.gov/pubmed/37893298 http://dx.doi.org/10.3390/mi14101860 |