Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD

In this study, the electrical characteristics and electrical coupling effect for monolithic 3-dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM-FBFET) were investigated using technology computer-aided design. The M3D-NVM-FBFET consists of an N-type FBFET with a...

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Detalles Bibliográficos
Autores principales: Oh, Jong Hyeok, Yu, Yun Seop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609442/
https://www.ncbi.nlm.nih.gov/pubmed/37893259
http://dx.doi.org/10.3390/mi14101822

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609442/
https://www.ncbi.nlm.nih.gov/pubmed/37893259
http://dx.doi.org/10.3390/mi14101822

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