Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conven...

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Detalles Bibliográficos
Autores principales: Das, Samadrita, Lenka, Trupti Ranjan, Talukdar, Fazal Ahmed, Nguyen, Hieu Pham Trung, Crupi, Giovanni
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609465/
https://www.ncbi.nlm.nih.gov/pubmed/37893363
http://dx.doi.org/10.3390/mi14101926

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609465/
https://www.ncbi.nlm.nih.gov/pubmed/37893363
http://dx.doi.org/10.3390/mi14101926

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