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Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors
Half-bridge silicon strain gauges are widely used in the fabrication of diaphragm-type high-pressure sensors, but in some applications, they suffer from low output sensitivity because of mounting position constraints. Through a special design and fabrication approach, a new half-bridge silicon strai...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10611398/ https://www.ncbi.nlm.nih.gov/pubmed/37896484 http://dx.doi.org/10.3390/s23208390 |
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author | Han, Ji-Hoon Min, Sung Joon Lee, Eun-Sang Kim, Joon Hyub Min, Nam Ki |
author_facet | Han, Ji-Hoon Min, Sung Joon Lee, Eun-Sang Kim, Joon Hyub Min, Nam Ki |
author_sort | Han, Ji-Hoon |
collection | PubMed |
description | Half-bridge silicon strain gauges are widely used in the fabrication of diaphragm-type high-pressure sensors, but in some applications, they suffer from low output sensitivity because of mounting position constraints. Through a special design and fabrication approach, a new half-bridge silicon strain gauge comprising one arc gauge responding to tangential strain and another linear gauge measuring radial strain was developed using Silicon-on-Glass (SiOG) substrate technology. The tangential gauge consists of grid patterns, such as the reciprocating arc of silicon piezoresistors on a thin glass substrate. When two half-bridges are connected to form a full bridge with arc-shaped gauges that respond to tangential strain, they have the advantage of providing much higher output sensitivity than a conventional half-bridge. Pressure sensors tested under pressure ranging from 0 to 50 bar at five different temperatures indicate a linear output with a typical sensitivity of approximately 16 mV/V/bar, a maximum zero shift of 0.05% FS, and a span shift of 0.03% FS. The higher output level of pressure sensing gauges will provide greater signal strength, thus maintaining a better signal-to-noise ratio than conventional pressure sensors. The offset and span shift curves are quite linear across the operating temperature range, giving the end user the advantage of using very simple algorithms for temperature compensation of offset and span shift. |
format | Online Article Text |
id | pubmed-10611398 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-106113982023-10-28 Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors Han, Ji-Hoon Min, Sung Joon Lee, Eun-Sang Kim, Joon Hyub Min, Nam Ki Sensors (Basel) Article Half-bridge silicon strain gauges are widely used in the fabrication of diaphragm-type high-pressure sensors, but in some applications, they suffer from low output sensitivity because of mounting position constraints. Through a special design and fabrication approach, a new half-bridge silicon strain gauge comprising one arc gauge responding to tangential strain and another linear gauge measuring radial strain was developed using Silicon-on-Glass (SiOG) substrate technology. The tangential gauge consists of grid patterns, such as the reciprocating arc of silicon piezoresistors on a thin glass substrate. When two half-bridges are connected to form a full bridge with arc-shaped gauges that respond to tangential strain, they have the advantage of providing much higher output sensitivity than a conventional half-bridge. Pressure sensors tested under pressure ranging from 0 to 50 bar at five different temperatures indicate a linear output with a typical sensitivity of approximately 16 mV/V/bar, a maximum zero shift of 0.05% FS, and a span shift of 0.03% FS. The higher output level of pressure sensing gauges will provide greater signal strength, thus maintaining a better signal-to-noise ratio than conventional pressure sensors. The offset and span shift curves are quite linear across the operating temperature range, giving the end user the advantage of using very simple algorithms for temperature compensation of offset and span shift. MDPI 2023-10-11 /pmc/articles/PMC10611398/ /pubmed/37896484 http://dx.doi.org/10.3390/s23208390 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Han, Ji-Hoon Min, Sung Joon Lee, Eun-Sang Kim, Joon Hyub Min, Nam Ki Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors |
title | Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors |
title_full | Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors |
title_fullStr | Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors |
title_full_unstemmed | Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors |
title_short | Half-Bridge Silicon Strain Gauges with Arc-Shaped Piezoresistors |
title_sort | half-bridge silicon strain gauges with arc-shaped piezoresistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10611398/ https://www.ncbi.nlm.nih.gov/pubmed/37896484 http://dx.doi.org/10.3390/s23208390 |
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