Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb(2)Te(3)/Bi(2)Te(3) Topological Insulator Heterostructure for Spin-Charge Conversion

[Image: see text] Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here, we report the full in situ metal organic chemical vapor depositi...

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Detalles Bibliográficos
Autores principales: Longo, Emanuele, Locatelli, Lorenzo, Tsipas, Polychronis, Lintzeris, Akylas, Dimoulas, Athanasios, Fanciulli, Marco, Longo, Massimo, Mantovan, Roberto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10623560/
https://www.ncbi.nlm.nih.gov/pubmed/37862590
http://dx.doi.org/10.1021/acsami.3c08830

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10623560/
https://www.ncbi.nlm.nih.gov/pubmed/37862590
http://dx.doi.org/10.1021/acsami.3c08830

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