An Amorphous Native Oxide Shell for High Bias‐Stress Stability Nanowire Synaptic Transistor

The inhomogeneous native oxide shells on the surfaces of III–V group semiconductors typically yield inferior and unstable electrical properties metrics, challenging the development of next‐generation integrated circuits. Herein, the native GaO (x) shells are profitably utilized by a simple in‐situ t...

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Detalles Bibliográficos
Autores principales: Zhuang, Xinming, Sa, Zixu, Zhang, Jie, Wang, Mingxu, Xu, Mingsheng, Liu, Fengjing, Song, Kepeng, He, Tao, Chen, Feng, Yang, Zai‐xing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10625101/
https://www.ncbi.nlm.nih.gov/pubmed/37767942
http://dx.doi.org/10.1002/advs.202302516

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10625101/
https://www.ncbi.nlm.nih.gov/pubmed/37767942
http://dx.doi.org/10.1002/advs.202302516

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