Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of spin-based quantum technologies, nano-mechanical resonators and photonics-on-a-chip. For shaping 3D structures out of SiC wafers, predominantly dry-etching t...

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Detalles Bibliográficos
Autores principales: Hochreiter, André, Groß, Fabian, Möller, Morris-Niklas, Krieger, Michael, Weber, Heiko B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10625639/
https://www.ncbi.nlm.nih.gov/pubmed/37925526
http://dx.doi.org/10.1038/s41598-023-46110-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10625639/
https://www.ncbi.nlm.nih.gov/pubmed/37925526
http://dx.doi.org/10.1038/s41598-023-46110-2

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