Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator

[Image: see text] Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by direct epitaxy could benefit from a front-end process where III–V materials are grown prior to the fabrication of pas...

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Detalles Bibliográficos
Autores principales: Yan, Zhao, Ratiu, Bogdan-Petrin, Zhang, Weiwei, Abouzaid, Oumaima, Ebert, Martin, Reed, Graham T., Thomson, David J., Li, Qiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10626574/
https://www.ncbi.nlm.nih.gov/pubmed/37937193
http://dx.doi.org/10.1021/acs.cgd.3c00633

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10626574/
https://www.ncbi.nlm.nih.gov/pubmed/37937193
http://dx.doi.org/10.1021/acs.cgd.3c00633

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