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Investigation of N-polar InGaN growth on misoriented ScAlMgO(4) substrates
We report the growth of N-polar InGaN layers on misoriented ScAlMgO(4) (SAM) substrates with offset of 0.3 to 5.8° toward the m-plane. The surface of N-polar InGaN with small-offset substrates exhibited hexagonal hillocks similar to those commonly observed in N-polar GaN layers. Larger misorientatio...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10630384/ https://www.ncbi.nlm.nih.gov/pubmed/37935747 http://dx.doi.org/10.1038/s41598-023-46542-w |