Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

[Image: see text] In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear sto...

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Detalles Bibliográficos
Autores principales: Guo, Linxin, Peng, Shengyuan, Liu, Yong, Tian, Shang, Zhou, Wei, Wang, Hao, Xue, Jianming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10633851/
https://www.ncbi.nlm.nih.gov/pubmed/37970004
http://dx.doi.org/10.1021/acsomega.3c07568

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10633851/
https://www.ncbi.nlm.nih.gov/pubmed/37970004
http://dx.doi.org/10.1021/acsomega.3c07568

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