Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

[Image: see text] In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear sto...

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Autores principales: Guo, Linxin, Peng, Shengyuan, Liu, Yong, Tian, Shang, Zhou, Wei, Wang, Hao, Xue, Jianming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10633851/
https://www.ncbi.nlm.nih.gov/pubmed/37970004
http://dx.doi.org/10.1021/acsomega.3c07568
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author Guo, Linxin
Peng, Shengyuan
Liu, Yong
Tian, Shang
Zhou, Wei
Wang, Hao
Xue, Jianming
author_facet Guo, Linxin
Peng, Shengyuan
Liu, Yong
Tian, Shang
Zhou, Wei
Wang, Hao
Xue, Jianming
author_sort Guo, Linxin
collection PubMed
description [Image: see text] In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10(–3) eV(–1). Prediction through this correlation is consistent with previous work. Besides, the measured value is about 1/2 of the simulation results with the popular SRIM code. Overall, our work provides a feasible way to get the generation rate of a certain irradiation-induced defect by electric measurements, and the correlation obtained is practically useful in various applications.
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spelling pubmed-106338512023-11-15 Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions Guo, Linxin Peng, Shengyuan Liu, Yong Tian, Shang Zhou, Wei Wang, Hao Xue, Jianming ACS Omega [Image: see text] In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10(–3) eV(–1). Prediction through this correlation is consistent with previous work. Besides, the measured value is about 1/2 of the simulation results with the popular SRIM code. Overall, our work provides a feasible way to get the generation rate of a certain irradiation-induced defect by electric measurements, and the correlation obtained is practically useful in various applications. American Chemical Society 2023-10-30 /pmc/articles/PMC10633851/ /pubmed/37970004 http://dx.doi.org/10.1021/acsomega.3c07568 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Guo, Linxin
Peng, Shengyuan
Liu, Yong
Tian, Shang
Zhou, Wei
Wang, Hao
Xue, Jianming
Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions
title Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions
title_full Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions
title_fullStr Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions
title_full_unstemmed Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions
title_short Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions
title_sort accurate measurement of defect generation rates in silicon carbide irradiated with energetic ions
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10633851/
https://www.ncbi.nlm.nih.gov/pubmed/37970004
http://dx.doi.org/10.1021/acsomega.3c07568
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