Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO(2)-Based Artificial Neurons

[Image: see text] Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses challenges to device reliability and uniformit...

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Detalles Bibliográficos
Autores principales: Dou, Hongyi, Lin, Zehao, Hu, Zedong, Tsai, Benson Kunhung, Zheng, Dongqi, Song, Jiawei, Lu, Juanjuan, Zhang, Xinghang, Jia, Quanxi, MacManus-Driscoll, Judith L., Ye, Peide D., Wang, Haiyan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10636789/
https://www.ncbi.nlm.nih.gov/pubmed/37875263
http://dx.doi.org/10.1021/acs.nanolett.3c02217

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10636789/
https://www.ncbi.nlm.nih.gov/pubmed/37875263
http://dx.doi.org/10.1021/acs.nanolett.3c02217

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