P- and N-type InAs nanocrystals with innately controlled semiconductor polarity

InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties suitable for next-generation electronic devices. Although there is a need for both n- and p-type semiconductors in such devices, InAs NCs typically exhibit only n-type characteristics. Here, we report InAs...

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Detalles Bibliográficos
Autores principales: Yoon, Jong Il, Kim, Hyoin, Kim, Meeree, Cho, Hwichan, Kwon, Yonghyun Albert, Choi, Mahnmin, Park, Seongmin, Kim, Taewan, Lee, Seunghan, Jo, Hyunwoo, Kim, BongSoo, Cho, Jeong Ho, Park, Ji-Sang, Jeong, Sohee, Kang, Moon Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10637754/
https://www.ncbi.nlm.nih.gov/pubmed/37948529
http://dx.doi.org/10.1126/sciadv.adj8276

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10637754/
https://www.ncbi.nlm.nih.gov/pubmed/37948529
http://dx.doi.org/10.1126/sciadv.adj8276

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