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P- and N-type InAs nanocrystals with innately controlled semiconductor polarity
InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties suitable for next-generation electronic devices. Although there is a need for both n- and p-type semiconductors in such devices, InAs NCs typically exhibit only n-type characteristics. Here, we report InAs...
Autores principales: | Yoon, Jong Il, Kim, Hyoin, Kim, Meeree, Cho, Hwichan, Kwon, Yonghyun Albert, Choi, Mahnmin, Park, Seongmin, Kim, Taewan, Lee, Seunghan, Jo, Hyunwoo, Kim, BongSoo, Cho, Jeong Ho, Park, Ji-Sang, Jeong, Sohee, Kang, Moon Sung |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10637754/ https://www.ncbi.nlm.nih.gov/pubmed/37948529 http://dx.doi.org/10.1126/sciadv.adj8276 |
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