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Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrate
We report on the structural properties of Bi thin films grown on (111) Si substrates with a thickness of 22–30 BL. HRXRD and EBSD measurements show that these Bi films are mainly composed of twinning grains in the (0003) direction. The grain size can be as large as tens of microns. From a double-pea...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10643447/ https://www.ncbi.nlm.nih.gov/pubmed/37957212 http://dx.doi.org/10.1038/s41598-023-46860-z |