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A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN
The milling profiles of single-crystal gallium nitride (GaN) when subjected to focused ion beams (FIBs) using gallium (Ga), xenon (Xe), and helium (He) ion sources were investigated. An experimental analysis via annular dark-field scanning transmission electron microscopy (ADF-STEM) and high-resolut...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10647709/ https://www.ncbi.nlm.nih.gov/pubmed/37947742 http://dx.doi.org/10.3390/nano13212898 |