Cargando…

A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN

The milling profiles of single-crystal gallium nitride (GaN) when subjected to focused ion beams (FIBs) using gallium (Ga), xenon (Xe), and helium (He) ion sources were investigated. An experimental analysis via annular dark-field scanning transmission electron microscopy (ADF-STEM) and high-resolut...

Descripción completa

Detalles Bibliográficos
Autores principales: Jiang, Shuai, Ortalan, Volkan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10647709/
https://www.ncbi.nlm.nih.gov/pubmed/37947742
http://dx.doi.org/10.3390/nano13212898
_version_ 1785135170759688192
author Jiang, Shuai
Ortalan, Volkan
author_facet Jiang, Shuai
Ortalan, Volkan
author_sort Jiang, Shuai
collection PubMed
description The milling profiles of single-crystal gallium nitride (GaN) when subjected to focused ion beams (FIBs) using gallium (Ga), xenon (Xe), and helium (He) ion sources were investigated. An experimental analysis via annular dark-field scanning transmission electron microscopy (ADF-STEM) and high-resolution transmission electron microscopy (HRTEM) revealed that Ga-FIB milling yields trenches with higher aspect ratios compared to Xe-FIB milling for the selected ion beam parameters (30 kV, 42 pA), while He-FIB induces local lattice disorder. Molecular dynamics (MD) simulations were employed to investigate the milling process, confirming that probe size critically influences trench aspect ratios. Interestingly, the MD simulations also showed that Xe-FIB generates higher aspect ratios than Ga-FIB with the same probe size, indicating that Xe-FIB could also be an effective option for nanoscale patterning. Atomic defects such as vacancies and interstitials in GaN from He-FIB milling were suggested by the MD simulations, supporting the lattice disorder observed via HRTEM. This combined experimental and simulation approach has enhanced our understanding of FIB milling dynamics and will benefit the fabrication of nanostructures via the FIB technique.
format Online
Article
Text
id pubmed-10647709
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-106477092023-11-03 A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN Jiang, Shuai Ortalan, Volkan Nanomaterials (Basel) Article The milling profiles of single-crystal gallium nitride (GaN) when subjected to focused ion beams (FIBs) using gallium (Ga), xenon (Xe), and helium (He) ion sources were investigated. An experimental analysis via annular dark-field scanning transmission electron microscopy (ADF-STEM) and high-resolution transmission electron microscopy (HRTEM) revealed that Ga-FIB milling yields trenches with higher aspect ratios compared to Xe-FIB milling for the selected ion beam parameters (30 kV, 42 pA), while He-FIB induces local lattice disorder. Molecular dynamics (MD) simulations were employed to investigate the milling process, confirming that probe size critically influences trench aspect ratios. Interestingly, the MD simulations also showed that Xe-FIB generates higher aspect ratios than Ga-FIB with the same probe size, indicating that Xe-FIB could also be an effective option for nanoscale patterning. Atomic defects such as vacancies and interstitials in GaN from He-FIB milling were suggested by the MD simulations, supporting the lattice disorder observed via HRTEM. This combined experimental and simulation approach has enhanced our understanding of FIB milling dynamics and will benefit the fabrication of nanostructures via the FIB technique. MDPI 2023-11-03 /pmc/articles/PMC10647709/ /pubmed/37947742 http://dx.doi.org/10.3390/nano13212898 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Jiang, Shuai
Ortalan, Volkan
A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN
title A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN
title_full A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN
title_fullStr A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN
title_full_unstemmed A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN
title_short A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN
title_sort comparative study of gallium-, xenon-, and helium-focused ion beams for the milling of gan
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10647709/
https://www.ncbi.nlm.nih.gov/pubmed/37947742
http://dx.doi.org/10.3390/nano13212898
work_keys_str_mv AT jiangshuai acomparativestudyofgalliumxenonandheliumfocusedionbeamsforthemillingofgan
AT ortalanvolkan acomparativestudyofgalliumxenonandheliumfocusedionbeamsforthemillingofgan
AT jiangshuai comparativestudyofgalliumxenonandheliumfocusedionbeamsforthemillingofgan
AT ortalanvolkan comparativestudyofgalliumxenonandheliumfocusedionbeamsforthemillingofgan