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A Comparative Study of Gallium-, Xenon-, and Helium-Focused Ion Beams for the Milling of GaN

The milling profiles of single-crystal gallium nitride (GaN) when subjected to focused ion beams (FIBs) using gallium (Ga), xenon (Xe), and helium (He) ion sources were investigated. An experimental analysis via annular dark-field scanning transmission electron microscopy (ADF-STEM) and high-resolut...

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Detalles Bibliográficos
Autores principales:	Jiang, Shuai, Ortalan, Volkan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10647709/ https://www.ncbi.nlm.nih.gov/pubmed/37947742 http://dx.doi.org/10.3390/nano13212898

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