High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation

This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are [...

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Detalles Bibliográficos
Autores principales: EL Ghazi, Haddou, En-nadir, Redouane, Jorio, Anouar, Basyooni-M. Kabatas, Mohamed A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648019/
https://www.ncbi.nlm.nih.gov/pubmed/37959574
http://dx.doi.org/10.3390/ma16216977

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648019/
https://www.ncbi.nlm.nih.gov/pubmed/37959574
http://dx.doi.org/10.3390/ma16216977

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