Wake-Up Free Ultrathin Ferroelectric Hf(0.5)Zr(0.5)O(2) Films

The development of the new generation of non-volatile high-density ferroelectric memory requires the utilization of ultrathin ferroelectric films. The most promising candidates are polycrystalline-doped HfO(2) films because of their perfect compatibility with silicon technology and excellent ferroel...

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Detalles Bibliográficos
Autores principales: Chouprik, Anastasia, Mikheev, Vitalii, Korostylev, Evgeny, Kozodaev, Maxim, Zarubin, Sergey, Vinnik, Denis, Gudkova, Svetlana, Negrov, Dmitrii
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648811/
https://www.ncbi.nlm.nih.gov/pubmed/37947671
http://dx.doi.org/10.3390/nano13212825

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648811/
https://www.ncbi.nlm.nih.gov/pubmed/37947671
http://dx.doi.org/10.3390/nano13212825

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